PART |
Description |
Maker |
WS256K32N-30HMA WS256K32-20G4C WS256K32-20G4CA WS2 |
256Kx32 SRAM Module(256Kx32静态RAM模块(存取时0ns 256Kx32 SRAM Module(256Kx32静态RAM模块(存取时5ns
|
White Electronic Designs Corporation ETC[ETC] List of Unclassifed Manufacturers
|
EDI8F32256C EDI8F32256C-MN EDI8G32256C-MM |
256Kx32 Static RAM CMOS, High Speed Module(256Kx32高速CMOS静态RAM模块) SRAM Modules TFT-LCD DC/DC with Integrated Amplifiers; Temperature Range: -40°C to 85°C; Package: 32-QFN T&R SRAM模块
|
White Electronic Designs Corporation 3M Company
|
IS61SPS25632D IS61SPS25632T IS61SPS25636T IS61LPS5 |
256Kx32 Synchronous Pipelined Static RAM
|
ISSI
|
EDI8F32259V15MNC EDI8F32259V EDI8F32259V12MMC EDI8 |
256Kx32 Static RAM CMOS, High Speed Module
|
White Electronic Designs Corporation
|
CY7C1483V33-100BGC CY7C1483V33-117BGC CY7C1483V33- |
IC, SDRAM, 64M BIT, 512KX4X32 BIT,3.3V,10NS,100MHZ,TSOP-86 2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 7.5 ns, PQFP100 2M x 36/4M x 18/1M x 72 Flow-through SRAM 1M X 72 CACHE SRAM, 6.5 ns, PBGA209 2M x 36/4M x 18/1M x 72 Flow-through SRAM 1M X 72 STANDARD SRAM, 7.5 ns, PBGA209 2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 7.5 ns, PBGA165 2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 6.5 ns, PQFP100 2M x 36/4M x 18/1M x 72 Flow-through SRAM 2M X 36 STANDARD SRAM, 8.5 ns, PQFP100 2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 8.5 ns, PQFP100 2M x 36/4M x 18/1M x 72 Flow-through SRAM 1M X 72 STANDARD SRAM, 5.5 ns, PBGA209
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 H |
Memory>Fast SRAM>QDR SRAM 36-Mbit DDR II SRAM Separate I/O 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
R1RP0416DSB-2PR R1RP0416D R1RP0416DGE-2LR R1RP0416 |
Memory>Fast SRAM>Asynchronous SRAM 4M High Speed SRAM (256-kword X 16-bit) From old datasheet system
|
http:// RENESAS[Renesas Electronics Corporation] Renesas Electronics Corporation.
|
HM66AQB18204BP-33 HM66AQB36104BP-40 HM66AQB9404BP- |
Memory>Fast SRAM>QDR SRAM 36-Mbit QDRTMII SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
HM66AQB18202BP-40 HM66AQB18202BP-50 HM66AQB18202BP |
Memory>Fast SRAM>QDR SRAM 36-Mbit QDRTMII SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
GM76U256C GM76U256CE GM76U256CL GM76U256CLE GM76U2 |
x8 SRAM 32K X 8 STANDARD SRAM, 120 ns, PDSO28 x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDSO28 32K x8 bit 3.0V Low Power CMOS slow SRAM
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
HM62W8511HCLJP-12 HM62W8511HC HM62W8511HCJP-10 HM6 |
Memory>Fast SRAM>Asynchronous SRAM 4M High Speed SRAM (512-kword x 8-bit) BOX 5.0X1.85X1.0 W/CLP BLK
|
RENESAS[Renesas Electronics Corporation] Renesas Electronics Corporation.
|
CY7C1350 7C1350 |
128Kx36 Pipelined SRAM with NoBL Architecture(带NoBL结构28Kx36流水线式 SRAM) 128K × 36至流水线与总线延迟静态存储器体系结构(带总线延迟结构28K × 36至流水线式的SRAM 128Kx36 Pipelined SRAM with NoBL Architecture(B>NoBL结构28Kx36流水线式 SRAM) From old datasheet system
|
Cypress Semiconductor Corp.
|